Characterization of Unipolar Power Devices Technology

The quality of momentus technological steps in unipolar power devices manufactoring was examine by means of capacitance and current measurements using a metal-oxide-semiconductor capacitors (MOS-C). From the low- (If) and high-frequency (hf) capacitance-voltage (C-V) curves, the effective defect charge and energy distribution of Si-SiO2 interface trap density were extracted, respectively. performin non-steady capacitance-time (C-t) and the time domain constant-capacitance (cC-t) at well as deep level transient spectroscopy (DLTS) techniques we have analysed electrically active that generation parameters are mostly influenced by traps at the Si-SiO2 interface. Moreover, breakdown voltage measurement confirms high quality and homogeneity of thermal oxide. Low density of carrier traps was achieved by intrinsic gettering technique.