Direct observation of infrared electroluminescence of high mobility graphene field-effect transistors

Direct observation of infrared electroluminescence of high mobility graphene field-effect transistors

In this presentation we will discuss our efforts based on high sensitivity infrared microscopy and spectroscopy to unravel the origin of super-incandescent emission of high-mobility graphene transistors.

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Veröffentlicht in:EPJ Web of Conferences 2023-01, Vol.287, p.4003
Hauptverfasser: Rossetti, Sylvio, Schmitt, Aurélien, Abou-Hamdan, Loubnan, Bretel, Rémi, Bouchon, Patrick, Baudin, Emmanuel, De Wilde, Yannick
Format: Artikel
Sprache:eng
Schlagworte:
Engineering Sciences
Physics
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Zusammenfassung:In this presentation we will discuss our efforts based on high sensitivity infrared microscopy and spectroscopy to unravel the origin of super-incandescent emission of high-mobility graphene transistors.
ISSN:2100-014X
2100-014X
DOI:10.1051/epjconf/202328704003