An Ultrasensitive Silicon-Based Electrolyte-Gated Transistor for the Detection of Peanut Allergens

The highly sensitive detection of peanut allergens (PAs) using silicon-based electrolyte-gated transistors (Si-EGTs) was demonstrated. The Si-EGT was made using a top-down technique. The fabricated Si-EGT showed excellent intrinsic electrical characteristics, including a low threshold voltage of 0.7...

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Veröffentlicht in:	Biosensors (Basel) 2022-01, Vol.12 (1), p.24
Hauptverfasser:	Kim, Donghoon, Jin, Bo, Kim, Sol-A, Choi, Wonyeong, Shin, Seonghwan, Park, Jiwon, Shim, Won-Bo, Kim, Kihyun, Lee, Jeong-Soo
Format:	Artikel
Sprache:	eng
Schlagworte:	Allergens Allergens - analysis Antibodies Arachis BioFET biosensor Biosensors Current leakage Electrodes electrolyte gate Electrolytes Food allergies Immobilization limit of detection peanut allergen Peanuts Proteins Semiconductor devices Sensitivity Silicon Threshold voltage Transistors Transistors, Electronic Voltage
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Beschreibung
Zusammenfassung:	The highly sensitive detection of peanut allergens (PAs) using silicon-based electrolyte-gated transistors (Si-EGTs) was demonstrated. The Si-EGT was made using a top-down technique. The fabricated Si-EGT showed excellent intrinsic electrical characteristics, including a low threshold voltage of 0.7 V, low subthreshold swing of
ISSN:	2079-6374 2079-6374
DOI:	10.3390/bios12010024