Interface-induced spontaneous positive and conventional negative exchange bias effects in bilayer La0.7Sr0.3MnO3/Eu0.45Sr0.55MnO3 heterostructures
We report zero-field-cooled spontaneous-positive and field-cooled conventional-negative exchange bias effects in epitaxial bilayer composed of La 0.7 Sr 0.3 MnO 3 (LSMO) with ferromagnetic (FM) and Eu 0.45 Sr 0.55 MnO 3 (ESMO) with A-type antiferromagnetic (AF) heterostructures respectively. A tempe...
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Veröffentlicht in: | Scientific reports 2017-07, Vol.7 (1), p.1-11, Article 6919 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report zero-field-cooled spontaneous-positive and field-cooled conventional-negative exchange bias effects in epitaxial bilayer composed of La
0.7
Sr
0.3
MnO
3
(LSMO) with ferromagnetic (FM) and Eu
0.45
Sr
0.55
MnO
3
(ESMO) with A-type antiferromagnetic (AF) heterostructures respectively. A temperature dependent magnetization study of LSMO/ESMO bilayers grown on SrTiO
3
(001) manifest FM ordering (T
C
) of LSMO at ~320 K, charge/orbital ordering of ESMO at ~194 K and AF ordering (T
N
) of ESMO at ~150 K. The random field Ising model has demonstrated an interesting observation of inverse dependence of exchange bias effect on AF layer thickness due to the competition between FM-AF interface coupling and AF domain wall energy. The isothermally field induced unidirectional exchange anisotropy formed at the interface of FM-LSMO layer and the kinetically phase-arrested magnetic phase obtained from the metamagnetic AF-ESMO layer could be responsible for the spontaneous exchange bias effect. Importantly, no magnetic poling is needed, as necessary for the applications. The FM-AF interface exchange interaction has been ascribed to the AF coupling with
∑
J
e
x
S
FM
⃗
⋅
S
AF
⃗
(
J
e
x
≈
J
A
F
, coupling constant between AF spins) for the spontaneous positive hysteresis loop shift, and the field-cooled conventional exchange bias has been attributed to the ferromagnetically exchanged interface with
J
e
x
≈
J
F
(coupling constant between FM spins). |
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ISSN: | 2045-2322 2045-2322 |
DOI: | 10.1038/s41598-017-07033-x |