InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band
A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors, such a...
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Veröffentlicht in: | Nanoscale research letters 2017-12, Vol.12 (1), p.128-128, Article 128 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors, such a pillar cavity with nanometer-scaled diameters can give a quality factor of 10
4
–10
5
at 1.55 μm. Capable of weakly and strongly coupling a single quantum dot with an optical mode, this nanocavity could be a prospective candidate for quantum-dot single-photon sources at 1.55-μm telecommunication band. |
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ISSN: | 1931-7573 1556-276X |
DOI: | 10.1186/s11671-017-1898-y |