MEASUREMENT OF MICROHARDNESS OF PHOTORESIST FILMS ON SILICON BY THE SCRATCHING METHOD

In recent years new types of resist for nano and submicronic lithography are intensively developed. As perspective materials for resist various polymeric compositions on a basis thermally and mechanically resistant polymers are considered. The purpose of the real work was studying of possibility of application of a microindentation and scratching methods for research of strength properties of films of the polymeric resist applied on plates of single-crystal silicon. As an example films of positive diazoquinonenovolak photoresist 1,0–5,0 μm thick which were applied on plates of silicon of various brands with a centrifugation method were used. The comparative analysis of an microindentation and scratching methods for microhardness measurement of structures photoresist-silicon is carried out. It is shown that the scratching an edge of a tetrahedral diamond pyramid (a scratching method) is suitable for microhardness measurement of resistive films from 1,0 μm thick, at the same time the method of an microindentation can’t be used for measurements thin (h = 1,0–2,5 μm) photoresist films. When using the load P = 1–2 g, more accurate values of microhardness gives the scratching method. Value of the microhardness determined by a scratching method is 20–40 % more than value of the microhardness received by a microindentation method. The increase in loading to 10 g leads to leveling of the specified distinctions – the values of a microhardness received by both methods coincide. Radiation of resistive films changed the structure of resist films. It is results to correlation of microhardness values given on measurement as by a scratching method, and by an indentation method.