Improvement on the onset voltage for electroluminescent devices based in a SiOx/SiOy bilayer obtained by sputtering

This work is focused on the composition, optical and electroluminescent properties of silicon rich oxide (SiOx, x < 2) films monolayers and bilayers (SiOx/SiOy) deposited by Sputtering with silicon excess between 6.2 to 10.7 at.% were deposited on p-type (100) silicon substrates. As-deposited SiOx films emit a broad photoluminescence (PL) band where the maximum peak shifts from 420 to 540 nm as the Si-excess increases from 6.2 to 10.7 at.%, respectively. The PL intensity strongly increases and the main PL peak shifts to the red region when the SiOx films are thermally annealed. The PL emission band was dependent on silicon excess and the presence of Si-O bonds defects working as emission centers. MOS-like devices were fabricated (N+ polysilicon was used as top contact and aluminum as bottom contact) to study the EL of SiOx monolayers and SiOx/SiOy bilayers. It was found that the required voltage to obtain EL was reduced when SiOx/SiOy bilayers were used in light emitting capacitors (BLECs) as compared to those with SiOx monolayers.