Conversion of bipolar resistive switching and threshold switching by controlling conductivity behavior and porous volumes of UiO-66 thin films

In the age of big data, a memory with cross-bar array architecture is urgently required to facilitate high-density data storage. To eliminate the sneak path current of integrated circuits, threshold switching-based selectors have been utilized simultaneously with resistive switching memories. In this study, the successful absorption of uric acid (UA) into a UiO-66 matrix was realized at room temperature without any disruption of the host crystalline structure. Fourier transform infrared and Raman spectra revealed the presence of UA based on the interaction of its carbonyl group with the UiO-66 matrix, whereas the diffraction peaks in the X-ray diffraction spectra of the (111) and (200) index planes were slightly shifted to the lower 2θ values, demonstrating the interaction of the UA on the system is occupy porous cages and free volume structures. The occupation of UA in the porous volume of the framework has been estimated by the significant vanishing of surface area from 1299 to 950 cm3 g−1 as well as the almost dismission of UiO-66 porous cages of 12.5 Å by BET analysis. The electronic transitions from linkers to metals and intramolecular between nearest linkers of UA absorbed UiO-66 were heavily reduced via the evidence from photoluminescence spectroscopy. These changes in structural and electronic density lead to the change in the electrical conduction mechanism, operating voltage, and resistive switching characteristics from memory switching to threshold switching corresponding to Ag/UiO-66–PVA/Ag and Ag/UA@UiO-66–PVA/Ag device, respectively. The reduction and vanish of porous cages and free volume restrict the formation management of silver conducting filaments through the UA@UiO-66–PVA matrix. This study provides a new approach to controlling the conversion switching behavior between memory and threshold in metal–organic framework materials for high-density cross-bar architecture. •The new approach to eliminate the sneak currents in the high-density crossbar array architecture.•Controlling surface area and conductivity behavior of UiO-66 matrix via Uric Acid adsorption.•For the first time, an XRD and Photoluminescence peak-fitting study on the microstructure and electronic transitions of Ag/UiO-66 – PVA/Ag and Ag/UA@UiO-66 – PVA/Ag devices.•The multimode of threshold resistive switching and bipolar resistive switching with different bias voltage and cages configuration.