Origin of extra diffraction spots for high crystalline alpha-Ga2O3

Origin of extra diffraction spots for high crystalline alpha-Ga2O3

This work has investigated the microstructure characteristics of high-quality alpha-Ga2O3 thin film grown on the Al2O3 single crystal substrate membrane. Hetero-epitaxial alpha Ga2O3 crystals reveal the formation of a three-fold symmetry at the initial stage of the growth by the oxygen template prov...

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Veröffentlicht in:AIP advances 2023-02, Vol.13 (2), p.025148-025148-6
Hauptverfasser: Lee, Yong-Hee, Yang, Duyoung, Gil, Byeongjun, Sheen, Mi-Hyang, Yoon, Euijoon, Park, Yongjo, Jang, Ho-Won, Yoon, Sangmoon, Kim, Miyoung, Kim, Young-Woon
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum oxide
Diffraction
Epitaxial growth
Gallium oxides
Single crystals
Substrates
Thin films
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Zusammenfassung:This work has investigated the microstructure characteristics of high-quality alpha-Ga2O3 thin film grown on the Al2O3 single crystal substrate membrane. Hetero-epitaxial alpha Ga2O3 crystals reveal the formation of a three-fold symmetry at the initial stage of the growth by the oxygen template provided by the Al2O3. Inversion domains are found, and they have a 180° inverted configuration from the surroundings. These IDs lead to extra diffraction spots when observed along [110] and [010].
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0136783