Flexible Amorphous GeSn MSM Photodetectors

We demonstrate amorphous Ge 0.92 Sn 0.08 surface illuminated metal-semiconductor-metal (MSM) photodetectors on flexible substrates for visible wavelength. Photodetection at 633 nm is achieved with an I-V response up to 10 -4 A for a 2 V bias voltage. Different evaporation rate effects on the amorpho...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics journal 2018-04, Vol.10 (2), p.1-9
Hauptverfasser: Yasar, Firat, Wenjuan Fan, Zhenqiang Ma
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We demonstrate amorphous Ge 0.92 Sn 0.08 surface illuminated metal-semiconductor-metal (MSM) photodetectors on flexible substrates for visible wavelength. Photodetection at 633 nm is achieved with an I-V response up to 10 -4 A for a 2 V bias voltage. Different evaporation rate effects on the amorphous GeSn MSM photodetector are examined. Bending/strain effects on device performance were studied by evaluating the current density versus voltage characteristics. Amorphous GeSn thin film deposition on polyethylene terephthalate flexible substrate and Ni/Au-GeSn-Ni/Au MSM photodetector finger pattern deposition were performed via thermal evaporation. Photocurrent and dark current densities of amorphous GeSn MSM photodetectors were obtained at 1.36 A/cm 2 and 0.24 A/cm 2 , respectively, where the photocurrent to dark current contrast ratio was found to be equal to 5.6. We also examined the evaporation rate, strain, and bending effect.
ISSN:1943-0655
1943-0647
DOI:10.1109/JPHOT.2018.2804360