Tailoring vertical phase distribution of quasi-two-dimensional perovskite films via surface modification of hole-transporting layer

Vertical phase distribution plays an important role in the quasi-two-dimensional perovskite solar cells. So far, the driving force and how to tailor the vertical distribution of layer numbers have been not discussed. In this work, we report that the vertical distribution of layer numbers in the quas...

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Veröffentlicht in:Nature communications 2019-02, Vol.10 (1), p.878-878, Article 878
Hauptverfasser: Liu, Tiefeng, Jiang, Youyu, Qin, Minchao, Liu, Junxue, Sun, Lulu, Qin, Fei, Hu, Lin, Xiong, Sixing, Jiang, Xueshi, Jiang, Fangyuan, Peng, Ping, Jin, Shengye, Lu, Xinhui, Zhou, Yinhua
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Sprache:eng
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Zusammenfassung:Vertical phase distribution plays an important role in the quasi-two-dimensional perovskite solar cells. So far, the driving force and how to tailor the vertical distribution of layer numbers have been not discussed. In this work, we report that the vertical distribution of layer numbers in the quasi-two-dimensional perovskite films deposited on a hole-transporting layer is different from that on glass substrate. The vertical distribution could be explained by the sedimentation equilibrium because of the colloidal feature of the perovskite precursors. Acid addition will change the precursors from colloid to solution that therefore changes the vertical distribution. A self-assembly layer is used to modify the acidic surface property of the hole-transporting layer that induces the appearance of desired vertical distribution for charge transport. The quasi-two-dimensional perovskite cells with the surface modification display a higher open-circuit voltage and a higher efficiency comparing to reference quasi-two-dimensional cells. Vertical phase distribution of quasi-two-dimensional perovskite plays vital roles in their optoelectronic properties. Here Liu et al. show that surface modification of the hole-transporting layer is an effective approach to control the vertical phase distribution and optimize the device efficiency.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-019-08843-5