Semiconducting ZnSnxGe1−xN2 alloys prepared by reactive radio-frequency sputtering

Semiconducting ZnSnxGe1−xN2 alloys prepared by reactive radio-frequency sputtering

We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnSnxGe1−xN2 thin-films. Three-target reactive radio-frequency sputtering was used to synthesize non-degenerately doped semiconducting alloys having

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Veröffentlicht in:APL materials 2015-07, Vol.3 (7), p.076104-076104-7
Hauptverfasser: Shing, Amanda M., Coronel, Naomi C., Lewis, Nathan S., Atwater, Harry A.
Format: Artikel
Sprache:eng
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Zusammenfassung:We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnSnxGe1−xN2 thin-films. Three-target reactive radio-frequency sputtering was used to synthesize non-degenerately doped semiconducting alloys having
ISSN:2166-532X
2166-532X
DOI:10.1063/1.4927009