Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures

We report on an approach to produce single photon emitters at the SiO _2 /SiC interface. We form a high-quality SiO _2 /SiC interface by high-temperature oxidation and subsequently perform oxidation at lower temperatures (200 °C–1000 °C) to generate the emitters. After reoxidation at 800 °C, we confirmed the formation of emitters with a bright luminescence (>50 kcps). Through Hambury-Brown and Twiss measurements, single photon characteristics were confirmed. Thus, the proposed approach is effective in generating highly bright single photon emitters at the SiO _2 /SiC interface.