A 37–40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT

A 37–40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT

In this paper, we present a 6-bit phase shifter designed and fabricated using the 150 nm GaN HEMT process. The designed phase shifter operates within the n260 (37~40 GHz) band, as specified in the 5G NR standard, and employs the structure of a switched-filter phase shifter. By serially connecting si...

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Veröffentlicht in:Nanomaterials (Basel, Switzerland) Switzerland), 2023-10, Vol.13 (20), p.2752
Hauptverfasser: Song, Jae-Hyeok, Lee, Eun-Gyu, Lee, Jae-Eun, Son, Jeong-Taek, Kim, Joon-Hyung, Baek, Min-Seok, Kim, Choul-Young
Format: Artikel
Sprache:eng
Schlagworte:
5G NR (n260)
Analysis
Communication
Design
Efficiency
Gallium
GaN HEMT
High electron mobility transistors
Insertion loss
Methods
Microwaves
Nitrides
Phase error
phase shifter
Phase shifters
Phased array antennas
STPS
T-type filter
Transistors
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Beschreibung
Zusammenfassung:In this paper, we present a 6-bit phase shifter designed and fabricated using the 150 nm GaN HEMT process. The designed phase shifter operates within the n260 (37~40 GHz) band, as specified in the 5G NR standard, and employs the structure of a switched-filter phase shifter. By serially connecting six single-bit phase shifters, ranging from 180° to 5.625°, the designed phase shifter achieves a phase range of 360°. The fabricated phase shifter exhibits a minimum insertion loss of 5 dB and an RMS phase error of less than 5.36° within the 37 to 40 GHz. This phase shifter is intended for seamless integration with high-power RF circuits.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano13202752