Electrical transport properties and Kondo effect in La 1-x Pr x NiO 3-δ thin films

The Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La Pr NiO (0 ≤ x ≤ 0.6) thin films. At low temperatures, the...

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Veröffentlicht in:Scientific reports 2021-03, Vol.11 (1), p.5391-10
Hauptverfasser: Hien-Hoang, Van, Chung, Nak-Kwan, Kim, Heon-Jung
Format: Artikel
Sprache:eng
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Zusammenfassung:The Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La Pr NiO (0 ≤ x ≤ 0.6) thin films. At low temperatures, the local magnetic moments of the 3d e electrons in Ni , which form because of oxygen vacancies, interact strongly with itinerant electrons, giving rise to an upturn in resistivity with x ≥ 0.2. Observation of negative magnetoresistance, described by the Khosla and Fisher model, further supports the Kondo picture. This case represents a rare example of the Kondo effect, where Ni acts as an impurity in the background of Ni . We suggest that when Ni does not participate in the regular lattice, it provides the local magnetic moments needed to scatter the conduction electrons in the Kondo effect. These results offer insights into emergent transport behaviors in metallic nickelates with mixed Ni and Ni ions, as well as structural disorder.
ISSN:2045-2322
DOI:10.1038/s41598-021-84736-2