Negative resistance of reverse-biased PbSnTe/PbTe double heterojunction diodes

Negative resistance of reverse-biased PbSnTe/PbTe double heterojunction diodes

Reverse-biased PbSnTe/PbTe double heterojunction diodes uniquely exhibit negative resistance. This property is assumed to originate from point defects in the deep levels of the diode crystal structure.

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Bibliographische Detailangaben
Veröffentlicht in:Results in physics 2016, Vol.6, p.41-42
Hauptverfasser: Yasuda, Arata, Suto, Ken, Nishizawa, Jun-ichi
Format: Artikel
Sprache:eng
Schlagworte:
Deep levels
Narrow band gap semiconductors
Negative resistance
PbSnTe
PbTe
Reverse bias
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Beschreibung
Zusammenfassung:Reverse-biased PbSnTe/PbTe double heterojunction diodes uniquely exhibit negative resistance. This property is assumed to originate from point defects in the deep levels of the diode crystal structure.
ISSN:2211-3797
2211-3797
DOI:10.1016/j.rinp.2016.01.007