INITIAL DEFORMATION OF SINX/AL CANTILEVERS ACCORDING TO THERMAL BUDGET FOR MEMS SENSORS

Mechanical  properties of MEMS devices  are specified  by their structure and  process  parameters, such as temperature, films thickness, deposition conditions, etc. These features, in particular,  the deposition temperature and post deposition treatments, determine the residual stress in the films,...

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Veröffentlicht in:Izvestiâ vysših učebnyh zavedenij Rossii. Radioèlektronika 2018-10 (4), p.47-56
Hauptverfasser: Rudakov, G. A., Khafizov, R. Z.
Format: Artikel
Sprache:eng ; rus
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Zusammenfassung:Mechanical  properties of MEMS devices  are specified  by their structure and  process  parameters, such as temperature, films thickness, deposition conditions, etc. These features, in particular,  the deposition temperature and post deposition treatments, determine the residual stress in the films, which affect the initial deformation, stability of parameters, sensitivity and reliability. Prediction, control and minimization of residual stress are an important part of the structural and technological design  of MEMS devices.  The effect  of post  deposition thermal treatment on  the  residual  mechanical stress  of SiNx, Al and SiNx/Al films is studied. It is shown  that the tensile stress in Al film is critical for residual  mechanical stress of the SiNx/Al structure and increases  with the increase  of temperature and time of post annealing. This allows to control the post annealing conditions  and the process  temperature budget to compensate the compressive stress in SiNx films and to minimize the summary residual stresses  and initial deformations of SiNx/Al structure. The residual stress of the bilayer SiNx/Al structure has little effect on the film thickness, but the ratio of SiNx and Al thicknesses is significant for the thermal deformation of SiNx/Al microcantilever.
ISSN:1993-8985
2658-4794
DOI:10.32603/1993-8985-2018-21-4-47-56