Changes in the electronic structure of the Si surface as a result of ion implantation

Changes in the electronic structure of the Si surface as a result of ion implantation

The composition, structure, and physicochemical properties of the surface and near-surface layers of silicon doped with low-energy (E 0

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Veröffentlicht in:E3S Web of Conferences 2023-01, Vol.383, p.4040
Hauptverfasser: Donaev, S.B., Ziyamukhamedova, U.A., Kenjaeva, M., Shirinov, G.M., Rakhimov, A.M., Abduvayitov, A.A.
Format: Artikel
Sprache:eng
Schlagworte:
Alloying elements
Chemical bonds
Electron states
Electronic structure
Energy bands
Ion implantation
Photoelectrons
Physicochemical properties
Silicon
Spectroscopy
Surface layers
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Beschreibung
Zusammenfassung:The composition, structure, and physicochemical properties of the surface and near-surface layers of silicon doped with low-energy (E 0
ISSN:2267-1242
2555-0403
2267-1242
DOI:10.1051/e3sconf/202338304040