Defect Analysis in a Long-Wave Infrared HgCdTe Auger-Suppressed Photodiode

Deep defects in the long-wave infrared (LWIR) HgCdTe heterostructure photodiode were measured via deep-level transient spectroscopy (DLTS) and photoluminescence (PL). The n -P -π-N photodiode structure was grown by following the metal-organic chemical vapor deposition (MOCVD) technique on a GaAs substrate. DLTS has revealed two defects: one electron trap with an activation energy value of 252 meV below the conduction band edge, located in the low n-type-doped transient layer at the π-N interface, and a second hole trap with an activation energy value of 89 meV above the valence band edge, located in the π absorber. The latter was interpreted as an isolated point defect, most probably associated with mercury vacancies (V ). Numerical calculations applied to the experimental data showed that this V hole trap is the main cause of increased dark currents in the LWIR photodiode. The determined specific parameters of this trap were the capture cross-section for the holes of = 10 -4 × 10 cm and the trap concentration of = 3-4 × 10 cm . PL measurements confirmed that the trap lies approximately 83-89 meV above the valence band edge and its location.