H-diamond MOS interface properties and FET characteristics with high-temperature ALD-grown HfO2 dielectric

The performance of hydrogen-terminated diamond MOSFETs with a large gate–drain interspace (LGD) was analyzed on a polycrystalline diamond sample. A 300 °C atomic layer deposition grown (ALD-grown) HfO2 dielectric (28 nm) was used the gate dielectric and device passivation layer. The HfO2/H-diamond i...

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Veröffentlicht in:AIP advances 2021-03, Vol.11 (3), p.035041-035041-7
Hauptverfasser: Ren, Zeyang, Xing, Yufei, Lv, Dandan, Xu, Jiamin, Zhang, Jinfeng, Zhang, Jincheng, Su, Kai, Zhang, Chunfu, Zhang, Hong, He, Qi, Hao, Yue
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Sprache:eng
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Zusammenfassung:The performance of hydrogen-terminated diamond MOSFETs with a large gate–drain interspace (LGD) was analyzed on a polycrystalline diamond sample. A 300 °C atomic layer deposition grown (ALD-grown) HfO2 dielectric (28 nm) was used the gate dielectric and device passivation layer. The HfO2/H-diamond interfacial valence band offset of 1.98 eV was determined by x-ray photoelectron spectroscopy, indicating that the high temperature grown HfO2 dielectric has great potential for accommodating a high density of holes on the H-diamond surface, and the high dielectric constant of HfO2 is also useful for improving the control capability of the gate on the device channel. A breakdown voltage of 657 V was achieved on the device. Baliga’s figure of merit of the device was calculated to be ∼2.0 MW/cm2, which is comparable to that of the H-diamond FETs with Al2O3 dielectrics that are more than 200 nm thick. The HfO2 dielectric shows great potential for use in H-diamond power devices.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0044004