Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

This paper proposes and develops a new technique based on low temperature conductance method to quantitatively evaluate the trap densities around NiGe/Ge Schottky junction interface and their time constants. It is found that the Schottky barrier height (SBH) in the NiGe/Ge junction is related with t...

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Veröffentlicht in:IEEE journal of the Electron Devices Society 2020, Vol.8 (1), p.350-357
Hauptverfasser: Li, Junkang, Chen, Zhuo, Qu, Yiming, Zhang, Rui
Format: Artikel
Sprache:eng
Schlagworte:
Electrical properties
Electron traps
Engineering
Engineering, Electrical & Electronic
Equivalent circuits
Germanides
Germanium
Intermetallic compounds
Junctions
Low temperature
low temperature conductance method
MOS devices
MOSFET
MOSFETs
Nickel compounds
Resistance
Schottky junction
Science & Technology
Semiconductor device measurement
Technology
Temperature measurement
traps around junction interface
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Beschreibung
Zusammenfassung:This paper proposes and develops a new technique based on low temperature conductance method to quantitatively evaluate the trap densities around NiGe/Ge Schottky junction interface and their time constants. It is found that the Schottky barrier height (SBH) in the NiGe/Ge junction is related with these junction traps. Additionally, the traps around junction interface could strongly affect the electrical properties of Ge MOSFETs, especially the OFF-state currents.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2020.2981627