Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer

We investigated properties of perpendicular-anisotropy magnetic tunnel junctions (p-MTJs) with [Co/Pt]-multilayer based synthetic ferrimagnetic reference (SyF) layer at elevated annealing temperature T a from 350°C to 400°C. Shift field H S defined as center field of minor resistance versus magnetic...

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Veröffentlicht in:AIP advances 2017-05, Vol.7 (5), p.055913-055913-5
Hauptverfasser: Honjo, H., Ikeda, S., Sato, H., Watanebe, T., Miura, S., Nasuno, T., Noguchi, Y., Yasuhira, M., Tanigawa, T., Koike, H., Muraguchi, M., Niwa, M., Ito, K., Ohno, H., Endoh, T.
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Sprache:eng
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Zusammenfassung:We investigated properties of perpendicular-anisotropy magnetic tunnel junctions (p-MTJs) with [Co/Pt]-multilayer based synthetic ferrimagnetic reference (SyF) layer at elevated annealing temperature T a from 350°C to 400°C. Shift field H S defined as center field of minor resistance versus magnetic field curve of the MTJs increased with increase of T a from 350°C to 400°C. The variation of H S is attributed to the variation of saturation magnetic moment in the SyF reference layer. Cross sectional energy dispersive X-ray spectroscopy analysis revealed that Fe element of CoFeB in the reference layer diffuses to Co/Pt multilayers in the SyF reference layer.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4973946