Effect of copper oxide (CuO) and vanadium oxide (V2O5) addition on the structural, optical and electrical properties of corundum (α-Al2O3)
In this work, we prepared a pure α-Al 2 O 3 , α-Al 2 O 3 /CuO (AC) and α-Al 2 O 3 /V 2 O 5 (AV) nanocomposite. The sol–gel method was used to prepare pure α-Al 2 O 3 , (AC) and (AV) samples at 1200 °C. Structural, electrical, and optical properties of the prepared samples were investigated using the...
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Veröffentlicht in: | Scientific reports 2023-09, Vol.13 (1), p.16100-16100, Article 16100 |
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Sprache: | eng |
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Zusammenfassung: | In this work, we prepared a pure α-Al
2
O
3
, α-Al
2
O
3
/CuO (AC) and α-Al
2
O
3
/V
2
O
5
(AV) nanocomposite. The sol–gel method was used to prepare pure α-Al
2
O
3
, (AC) and (AV) samples at 1200 °C. Structural, electrical, and optical properties of the prepared samples were investigated using the X-ray diffraction (XRD), UV–Visible spectrophotometer, and conductivity meter, respectively. The XRD results confirmed the crystalline nature and the presence of the hexagonal structure of α-Al
2
O
3
, the rhombohedra structure of CuAlO
2
and the tetragonal structure of V
2
O
5
. Moreover, the crystallite size of pure α-Al
2
O
3
was 43.1 nm, while the crystallite size of α-Al
2
O
3
in samples AC and AV nanocompsite was 24.05 nm and 34.84 nm respectively. The optical measurements showed that the band gap α-Al
2
O
3
decreased significantly from 5.28 eV for pure to 3.7 and 3.4 eV to AC and AV respectively. The DC electrical conductivity (σ
d.c
) values were measured for all prepared samples at room temperature. The electrical conductivity was 2.4 × 10
–7
and 1.8 × 10
–7
(Ω cm)
−1
in AC and AV nanocompsite respectively, while ionic conductivity (σ
ion
) decreased from 3 × 10
–10
in pure α-Al
2
O
3
to 7 × 10
–5
and 1 × 10
–5
in AC and AV nanocompsite, respectively. The results showed an improvement in the structural, optical, and electrical properties, which may make these materials a candidate for use in many applications, such as photocatalytic, gas sensors, optoelectronics, microelectronics, semiconductor devices, ……etc. |
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ISSN: | 2045-2322 2045-2322 |
DOI: | 10.1038/s41598-023-43309-1 |