Spinristor: A Spin‐Filtering Memristor

In this paper, an in silico proof of concept of a spinristor is proposed and provided; a new electronic component that combines a spin‐filter and a memristor in a single molecule, useful for in‐memory processing. It builds on the idea of an open‐shell transition metal ion enclosed within an elliptical fullerene connected to a pair of electrodes. The spin‐ and electronic‐polarization induced by the enclosed open‐shell metallic ion leads to differential rectification of the electrons at low voltages applied between the source–drain electrodes, VSD. The position of the encapsulated ion can be switched by a high VSD which leads to a change in the direction of the rectification and the spin‐filtering ratio. The system can thus be used as a switching rectifier, that is, a memristor and a spin‐filter; therefore, a spinristor. The effect of different linkers on the function of the proposed device is further analyzed to show that linkers reduce the overall conductivity by an order of magnitude, but improve the spin‐filtering ratio. The computations suggest that nitrile and isocyanide linkers enhance the rectification, too. To the best of the authors’ knowledge, spinristor has no macroscopic counterpart in electronics, so far. A metallofullerene can act as a molecular electronic component that enables switching between two distinctly different spin‐filtering functions.