A 190.3‐dBc/Hz FoM 16‐GHz rotary travelling‐wave oscillator with reliable direction control

This letter presents a rotary travelling‐wave oscillator (RTWO) with reliable direction control in a standard 130 nm complementary metal–oxide–semiconductor (CMOS) technology. To achieve low phase noise (PN), and low power consumption, 16‐stages customised transmission line segments are designed and...

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Veröffentlicht in:	Electronics letters 2021-03, Vol.57 (5), p.209-211
Hauptverfasser:	Sun, Fangzhou, Zhou, Yushi, Bai, Zhanjun, Chen, Yong
Format:	Artikel
Sprache:	eng
Schlagworte:	Analogue circuit design, modelling and testing CMOS CMOS integrated circuits Microwave integrated circuits Noise Oscillators Phase noise Power consumption Semiconductor integrated circuit design, layout, modelling and testing Transistors Transmission lines Travelling wave tubes
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Zusammenfassung:	This letter presents a rotary travelling‐wave oscillator (RTWO) with reliable direction control in a standard 130 nm complementary metal–oxide–semiconductor (CMOS) technology. To achieve low phase noise (PN), and low power consumption, 16‐stages customised transmission line segments are designed and simulated on electromagnetic tools. The PN is investigated through modelling the RTWO as multiple standing‐wave oscillators. The proposed oscillator achieves 11.2% tuning range, 190.3 dBc/Hz figure‐of‐merit (FoM) at 1 MHz offset and 192.3 dBc/Hz FoM at 10 MHz offset with 5.8‐mW power consumption from 16‐GHz carrier.
ISSN:	0013-5194 1350-911X
DOI:	10.1049/ell2.12089