Numerical Study of a Solar Cell to Achieve the Highest InGaN Power Conversion Efficiency for the Whole In-Content Range

A solar cell structure with a graded bandgap absorber layer based on InGaN has been proposed to overcome early predicted efficiency. Technological issues such as carrier concentration in the p- and n-type are based on the data available in the literature. The influence of carrier concentration-depen...

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Veröffentlicht in:Micromachines (Basel) 2022-10, Vol.13 (11), p.1828
Hauptverfasser: Martínez-Revuelta, Rubén, Solís-Cisneros, Horacio I., Trejo-Hernández, Raúl, Pérez-Patricio, Madaín, Paniagua-Chávez, Martha L., Grajales-Coutiño, Rubén, Camas-Anzueto, Jorge L., Hernández-Gutiérrez, Carlos A.
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Sprache:eng
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Zusammenfassung:A solar cell structure with a graded bandgap absorber layer based on InGaN has been proposed to overcome early predicted efficiency. Technological issues such as carrier concentration in the p- and n-type are based on the data available in the literature. The influence of carrier concentration-dependent mobility on the absorber layer has been studied, obtaining considerable improvements in efficiency and photocurrent density. Efficiency over the tandem solar cell theoretical limit has been reached. A current density of 52.95 mA/cm2, with an efficiency of over 85%, is determined for a PiN structure with an InGaN step-graded bandgap absorption layer and 65.44% of power conversion efficiency for the same structure considering piezoelectric polarization of fully-strained layers and interfaces with electron and hole surface recombination velocities of 10−3 cm/s.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi13111828