Thermally Stable Organic Field‐Effect Transistors Based on Asymmetric BTBT Derivatives for High Performance Solar‐Blind Photodetectors

High‐performance solar‐blind photodetectors are widely studied due to their unique significance in military and industrial applications. Yet the rational molecular design for materials to possess strong absorption in solar‐blind region is rarely addressed. Here, an organic solar‐blind photodetector is reported by designing a novel asymmetric molecule integrated strong solar‐blind absorption with high charge transport property. Such alkyl substituted [1]benzothieno[3,2‐b][1]‐benzothiophene (BTBT) derivatives Cn‐BTBTN (n = 6, 8, and 10) can be easily assembled into 2D molecular crystals and perform high mobility up to 3.28 cm2 V−1s−1, which is two orders of magnitude higher than the non‐substituted core BTBTN. Cn‐BTBTNs also exhibit dramatically higher thermal stability than the symmetric alkyl substituted C8‐BTBT. Moreover, C10‐BTBTN films with the highest mobility and strongest solar‐blind absorption among the Cn‐BTBTNs are applied for solar‐blind photodetectors, which reveal record‐high photosensitivity and detectivity up to 1.60 × 107 and 7.70 × 1014 Jones. Photodetector arrays and flexible devices are also successfully fabricated. The design strategy can provide guidelines for developing materials featuring high thermal stability and stimulating such materials in solar‐blind photodetector application. Asymmetric [1]benzothieno[3,2‐b][1]‐benzothiophene (BTBT) derivatives of Cn‐BTBTNs that integrate strong solar‐blind absorption with high mobility are designed and synthesized. C10‐BTBTN‐based solar‐blind photodetectors demonstrate preeminent performance with the P, R, and D* up to 1.60 × 107, 8.40 × 103 A W−1, and 7.70 × 1014 Jones, respectively, which exhibit a broad prospect in optoelectronic device applications.