Strain-induced quantum Hall phenomena of excitons in graphene

We study direct and indirect pseudomagnetoexcitons, formed by an electron and a hole in the layers of gapped graphene under strain-induced gauge pseudomagnetic field. Since the strain-induced pseudomagnetic field acts on electrons and holes the same way, it occurs that the properties of single pseud...

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Veröffentlicht in:Scientific reports 2022-02, Vol.12 (1), p.2950-2950, Article 2950
Hauptverfasser: Berman, Oleg L., Kezerashvili, Roman Ya, Lozovik, Yurii E., Ziegler, Klaus G.
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Sprache:eng
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Zusammenfassung:We study direct and indirect pseudomagnetoexcitons, formed by an electron and a hole in the layers of gapped graphene under strain-induced gauge pseudomagnetic field. Since the strain-induced pseudomagnetic field acts on electrons and holes the same way, it occurs that the properties of single pseudomagnetoexcitons, their collective effects and phase diagram are cardinally different from those of magnetoexcitons in a real magnetic field. We have derived wave functions and energy spectrum of direct in a monolayer and indirect pseudomagnetoexcitons in a double layer of gapped graphene. The quantum Hall effect for direct and indirect excitons was predicted in the monolayers and double layers of gapped graphene under strain-induced gauge pseudomagnetic field, correspondingly.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-022-06486-z