Electronic band structure and magnetism of CoFeV0.5Mn0.5Si
Half-metallic Heusler alloys have attracted significant attention due to their potential application in spin-transport-based devices. We have synthesized one such alloy, CoFeV0.5Mn0.5Si, using arc melting and high-vacuum annealing at 600 °C for 24 hours. First principles calculation indicates that C...
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Veröffentlicht in: | AIP advances 2022-03, Vol.12 (3), p.035011-035011-5 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Half-metallic Heusler alloys have attracted significant attention due to their potential application in spin-transport-based devices. We have synthesized one such alloy, CoFeV0.5Mn0.5Si, using arc melting and high-vacuum annealing at 600 °C for 24 hours. First principles calculation indicates that CoFeV0.5Mn0.5Si shows a nearly half-metallic band structure with a degree of spin polarization of about 93%. In addition, this value can be enhanced by the application of tensile strain. The room temperature x-ray diffraction patterns are indexed with the cubic crystal structure without secondary phases. The annealed sample shows ferromagnetic order with the Curie temperature well above room temperature (Tc = 657 K) and a saturation magnetization of about 92 emu/g. Our results indicate that CoFeV0.5Mn0.5Si has a potential for room temperature spin-transport-based devices. |
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ISSN: | 2158-3226 2158-3226 |
DOI: | 10.1063/9.0000252 |