Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films

In this study, In2O3 thin films were deposited on quartz substrates bypulsed laser deposition technique at room temperature and followed bythermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical bandgap was found to increase with the annealing temperature from 3.5 to 3.85 eVand the transmittance was observed above 90%. XRD results show that the filmsare polycrystalline in nature and crystallizes with preferred orientation (222).SEM images show that the films are