Hydrogenated TiO2 Thin Film for Accelerating Electron Transport in Highly Efficient Planar Perovskite Solar Cells

Intensive studies on low‐temperature deposited electron transport materials have been performed to improve the efficiency of n‐i‐p type planar perovskite solar cells to extend their application on plastic and multijunction device architectures. Here, a TiO2 film with enhanced conductivity and tailored band edge is prepared by magnetron sputtering at room temperature by hydrogen doping (HTO), which accelerates the electron extraction from perovskite photoabsorber and reduces charge transfer resistance, resulting in an improved short circuit current density and fill factor. The HTO film with upward shifted Fermi level guarantees a smaller loss on VOC and facilitates the growth of high‐quality absorber with much larger grains and more uniform size, leading to devices with negligible hysteresis. In comparison with the pristine TiO2 prepared without hydrogen doping, the HTO‐based device exhibits a substantial performance enhancement leading to an efficiency of 19.30% and more stabilized photovoltaic performance maintaining 93% of its initial value after 300 min continuous illumination in the glove box. These properties permit the room‐temperature magnetron sputtered HTO film as a promising electron transport material for flexible and tandem perovskite solar cell in the future. Hydrogen doped TiO2 (HTO) is prepared by room temperature sputtering. HTO doubles the carrier concentration and shifts the Fermi level upward slightly, facilitating electron injection at the interface of HTO/perovskite. Moreover, the HTO‐based solar cells present better and more stabilized performance, compared with that on pristine TiO2, indicating HTO as a promising electron transport layers processed at room temperature.