Low-bias photoelectrochemical water splitting via mediating trap states and small polaron hopping

Metal oxides are promising for photoelectrochemical (PEC) water splitting due to their robustness and low cost. However, poor charge carrier transport impedes their activity, particularly at low-bias voltage. Here we demonstrate the unusual effectiveness of phosphorus doping into bismuth vanadate (B...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nature communications 2022-10, Vol.13 (1), p.6231-12, Article 6231
Hauptverfasser: Wu, Hao, Zhang, Lei, Du, Aijun, Irani, Rowshanak, van de Krol, Roel, Abdi, Fatwa F., Ng, Yun Hau
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Metal oxides are promising for photoelectrochemical (PEC) water splitting due to their robustness and low cost. However, poor charge carrier transport impedes their activity, particularly at low-bias voltage. Here we demonstrate the unusual effectiveness of phosphorus doping into bismuth vanadate (BiVO 4 ) photoanode for efficient low-bias PEC water splitting. The resulting BiVO 4 photoanode shows a separation efficiency of 80% and 99% at potentials as low as 0.6 and 1.0 V RHE , respectively. Theoretical simulation and experimental analysis collectively verify that the record performance originates from the unique phosphorus-doped BiVO 4 configuration with concurrently mediated carrier density, trap states, and small polaron hopping. With NiFeO x cocatalyst, the BiVO 4 photoanode achieves an applied bias photon-to-current efficiency of 2.21% at 0.6 V RHE . The mechanistic understanding of the enhancement of BiVO 4 properties provides key insights in trap state passivation and polaron hopping for most photoactive metal oxides. While photoelectrochemical water splitting produces fuel from solar energy, a large fraction of photoanode photoexcited charge carriers cannot be extracted efficiently at low bias voltages. Here, authors improve the charge transport in P-doped BiVO 4 by mediating polaron hopping and trap states.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-022-33905-6