Optimization of Zn2SiO4 Anode Structure for Deep Ultraviolet Generation With Carbon Nanotube Emitters

Optimization of Zn2SiO4 Anode Structure for Deep Ultraviolet Generation With Carbon Nanotube Emitters

Ultraviolet (UV) light is applied to various industrial and medical devices. In particular, deep UV light with short wavelengths could minimize the damage to human cells when it is used to virus and bacterial sterilization. We optimized the Zn 2 SiO 4 anode structure to improve deep UV light generat...

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Veröffentlicht in:IEEE journal of the Electron Devices Society 2019, Vol.7, p.735-739
Hauptverfasser: Yoo, Sung Tae, Lee, Hye In, Park, Kyu Chang
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Anodes
carbon nanotube
Carbon nanotubes
Cathodes
Cold cathodes
Deep ultraviolet
Electron beams
electron emission
Emitters
Emitters (electron)
Luminous intensity
Medical devices
Medical electronics
Nickel
Optimization
Silicon
Sterilization
Substrates
Ultraviolet radiation
Viruses
Zinc silicates
Zn₂SiO
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Zusammenfassung:Ultraviolet (UV) light is applied to various industrial and medical devices. In particular, deep UV light with short wavelengths could minimize the damage to human cells when it is used to virus and bacterial sterilization. We optimized the Zn 2 SiO 4 anode structure to improve deep UV light generation with a carbon nanotube (CNT) cold cathode based electron beam (C-beam) pumping. Annealing at 1000 °C and 400 mTorr produces anode with the highest deep UV intensity. Using a 100-nm SiO x layer between Zn 2 SiO 4 and quartz substrate, the intensity of deep UV light at a wavelength of 226 nm was increased by 1.8 times.
ISSN:2168-6734
DOI:10.1109/JEDS.2019.2931015