Innovative process to obtain thin films and micro-nanostructured ZrN films from a photo-structurable ZrO2 sol-gel using rapid thermal nitridation
Zirconium nitride (ZrN) is widely used in many industrial sectors for its outstanding performances including its mechanical properties, high chemical and thermal stability. Associated with its plasmonic behavior, these properties make ZrN a suitable candidate for optical applications at high tempera...
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Veröffentlicht in: | Materials today advances 2023-12, Vol.20, p.100430, Article 100430 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Zirconium nitride (ZrN) is widely used in many industrial sectors for its outstanding performances including its mechanical properties, high chemical and thermal stability. Associated with its plasmonic behavior, these properties make ZrN a suitable candidate for optical applications at high temperature or in extreme environments. The authors present an innovative, easy-to-use and rapid process for producing ZrN thin films from a photo-structurable ZrO2 sol-gel using a rapid thermal nitridation (RTN) process. In this process, a ZrO2 sol-gel layer is converted into a ZrN thin film in a few minutes by rapid thermal annealing (RTA) under ammonia gas. Compared to physical or chemical vapor deposition, usually used to produce ZrN thin films, the advantages of the sol-gel method include suitability for non-planar and large substrates and the possibility of nanotexturing of crystallized ZrN surfaces in considerably less time, at a larger scale and at a lower cost. The ZrO2 and ZrN thin films were characterized by Raman spectroscopy, X-ray diffraction and Transmission Electron Microscopy, to confirm complete nitridation. The optical, electrical and tribological properties were also investigated. Finally, the nitridation method was also used on structured ZrO2 layers and showed the versatility of the process e.g. enabling the production of micro-nanostructured ZrN films without using any etching techniques. |
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ISSN: | 2590-0498 2590-0498 |
DOI: | 10.1016/j.mtadv.2023.100430 |