Investigation of structural, energy state and kinetic characteristics of RNiSb semiconductor (R = Gd, Lu)

Investigation of structural, energy state and kinetic characteristics of RNiSb semiconductor (R = Gd, Lu)

Peculiarities of structural, energy and kinetic characteristics of p-GdNiSb and p-LuNiSb semiconductors in the temperature range T = 4.2 - 400 K. were investigated. ) to 6% vacancy and partial, to 1.35%, displacement of Ni (4c) atoms by Lu (5d16s2).

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Veröffentlicht in:Fìzika ì hìmìâ tverdogo tìla (Online) 2017-09, Vol.17 (1), p.37-42
Hauptverfasser: Romaka, L.P., Kaczorowski, D., Нoryn, A.M., Stadnyk, Yu.V., Krayovskyy, V.Ya, Romaka, V.V.
Format: Artikel
Sprache:eng
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Zusammenfassung:Peculiarities of structural, energy and kinetic characteristics of p-GdNiSb and p-LuNiSb semiconductors in the temperature range T = 4.2 - 400 K. were investigated. ) to 6% vacancy and partial, to 1.35%, displacement of Ni (4c) atoms by Lu (5d16s2).
ISSN:1729-4428
2309-8589
DOI:10.15330/pcss.17.1.37-42