Design and integration of single-qubit rotations and two-qubit gates in silicon above one Kelvin

Spin qubits in quantum dots define an attractive platform for quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate above one Kelvin. However, despite demonstrations of SWAP oscillations, the integration of this tw...

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Veröffentlicht in:Communications materials 2022-11, Vol.3 (1), p.1-7, Article 82
Hauptverfasser: Petit, Luca, Russ, Maximilian, Eenink, Gertjan H. G. J., Lawrie, William I. L., Clarke, James S., Vandersypen, Lieven M. K., Veldhorst, Menno
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Sprache:eng
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Zusammenfassung:Spin qubits in quantum dots define an attractive platform for quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate above one Kelvin. However, despite demonstrations of SWAP oscillations, the integration of this two-qubit gate together with single-qubit control to create a universal gate set as originally proposed for single spins in quantum dots has remained elusive. Here, we show that we can overcome these limitations and execute a multitude of native two-qubit gates, together with single-qubit control, in a single device, reducing the operation overhead to perform quantum algorithms. We demonstrate single-qubit rotations, together with the two-qubit gates CROT, CPHASE, and SWAP, on a silicon double quantum dot. Furthermore, we introduce adiabatic and diabatic composite sequences that allow the execution of CPHASE and SWAP gates on the same device, despite the finite Zeeman energy difference. Both two-qubit gates can be executed in less than 100 ns and, by theoretically analyzing the experimental noise sources, we predict control fidelities exceeding 99%, even for operation above one Kelvin. Spin qubits are attractive for scalable quantum information, but integrating different classes of two-qubit logic has remained elusive. Here, the SWAP, CPHASE, and CNOT-class two-qubit gates are implemented in a silicon device operating even at temperatures above 1 K.
ISSN:2662-4443
2662-4443
DOI:10.1038/s43246-022-00304-9