Novel 1064 nm DBR lasers combining active layer removal and surface gratings

The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows the removal of the active quantum wells in passive sections where no current is injected. The DBR lasers...

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Veröffentlicht in:	Electronics Letters 2021-07, Vol.57 (14), p.559-561
Hauptverfasser:	Brox, O., Wenzel, H., Fricke, J., Della Casa, P., Maaßdorf, A., Matalla, M., Wenzel, S., Wicht, A., Knigge, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Bragg reflectors DBR lasers Design of specific laser systems Efficiency Epitaxy Etching Gratings, echelles Gravitational waves Laser beam characteristics and interactions Laser beam interactions and properties Lasers Lasing action in semiconductors Organic chemicals Quantum wells Semiconductor lasers
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Beschreibung
Zusammenfassung:	The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows the removal of the active quantum wells in passive sections where no current is injected. The DBR lasers fabricated with a two‐step epitaxial approach without an active layer in the grating sections show improved performance in terms of power, efficiency, and linewidth in comparison to its all‐active DBR counterparts.
ISSN:	0013-5194 1350-911X
DOI:	10.1049/ell2.12192