Analysis of Light Intensity and Charge Holding Time Dependence of Pinned Photodiode Full Well Capacity

In this paper, the light intensity and charge holding time dependence of pinned photodiode (PD) full well capacity (FWC) are studied for our pixel structure with a buried overflow path under the transfer gate. The formulae for PDFWC derived from a simple analytical model show that the relation betwe...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Sensors (Basel, Switzerland) Switzerland), 2023-10, Vol.23 (21), p.8847
Hauptverfasser: Miyauchi, Ken, Isozaki, Toshiyuki, Ikeno, Rimon, Nakamura, Junichi
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper, the light intensity and charge holding time dependence of pinned photodiode (PD) full well capacity (FWC) are studied for our pixel structure with a buried overflow path under the transfer gate. The formulae for PDFWC derived from a simple analytical model show that the relation between light intensity and PDFWC is logarithmic because PDFWC is determined by the balance between the photo-generated current and overflow current under the bright condition. Furthermore, with using pulsed light before a charge holding operation in PD, the accumulated charges in PD decrease with the holding time due to the overflow current, and finally, it reaches equilibrium PDFWC. The analytical model has been successfully validated by the technology computer-aided design (TCAD) device simulation and actual device measurement.
ISSN:1424-8220
1424-8220
DOI:10.3390/s23218847