Fast Response Hot (111) HGCDTE MWIR Detectors
In this work we report simulation and experimental results for an MWIR HgCdTe photodetector designed by computer simulation and fabricated in a joint laboratory run by VIGO Sytems S.A. and Military University of Technology. The device is based on a modified N pP heterostructure grown on 2”., epiread...
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Veröffentlicht in: | Metrology and Measurement systems 2017-09, Vol.24 (3), p.509-514 |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this work we report simulation and experimental results for an MWIR HgCdTe photodetector designed by computer simulation and fabricated in a joint laboratory run by VIGO Sytems S.A. and Military University of Technology. The device is based on a modified N
pP
heterostructure grown on 2”., epiready, semi-insulating (100) GaAs substrates in a horizontal MOCVD AIX 200 reactor.
The devices were examined by measurements of spectral and time responses as a function of a bias voltage and operating temperatures. The time response was measured with an
(OPO) as the source of ~25 ps pulses of infrared radiation, tuneable in a 1.55–16 μm spectral range. Two-stage Peltier cooled devices (230 K) with a 4.1 μm cut-off wavelength were characterized by 1.6 × 10
cm Hz
/W peak detectivity and < 1 ns time constant for
> 500 mV. |
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ISSN: | 2300-1941 2080-9050 2300-1941 |
DOI: | 10.1515/mms-2017-0044 |