Bistable 1060-nm High-Power Single-Mode DFB Laser Diode

Bistable 1060-nm High-Power Single-Mode DFB Laser Diode

We report a novel high-power bistable distributed feedback (DFB) semiconductor laser diode operating near 1060 nm, which is realized by inserting a high-bandgap electron barrier layer and a grating layer in a super large optical cavity laser design. Optical and electrical bistable characteristics ar...

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Veröffentlicht in:IEEE photonics journal 2015-10, Vol.7 (5), p.1-7
Hauptverfasser: Tan, Shaoyang, Sun, Mengdie, Lu, Dan, Zhang, Ruikang, Wang, Wei, Ji, Chen
Format: Artikel
Sprache:eng
Schlagworte:
Bistable
DFB laser diode
Diffraction gratings
Diode lasers
Diodes
Flip-flops
Gratings (spectra)
Holes
Lasers
Noise levels
Optical bistability
Optical device fabrication
Optical reflection
Optical resonators
Optical switches
Semiconductor lasers
Stimulated emission
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Beschreibung
Zusammenfassung:We report a novel high-power bistable distributed feedback (DFB) semiconductor laser diode operating near 1060 nm, which is realized by inserting a high-bandgap electron barrier layer and a grating layer in a super large optical cavity laser design. Optical and electrical bistable characteristics are both observed for this device. An on-state optical output power of 98 mW and an on-off extinction ratio of 22 dB were demonstrated between the bistable states. A qualitative physical model based on carrier population profile shift is used to explain the switching effect. Optical flip-flop operation was also demonstrated.
ISSN:1943-0655
1943-0647
DOI:10.1109/JPHOT.2015.2483203