SiGe HBT wideband amplifier for millimeter wave applications

SiGe HBT wideband amplifier for millimeter wave applications

A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz...

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Veröffentlicht in:Journal of Telecommunications and Information Technology 2023-06 (1), p.8-12
Hauptverfasser: Krˇcmar, Marco, Noether, Nils, Boeck, Georg
Format: Artikel
Sprache:eng
Schlagworte:
bipolar integrated circuits
HBT
millimeter wave
SiGe
wideband amplifie
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Beschreibung
Zusammenfassung:A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author’s best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.
ISSN:1509-4553
1899-8852
DOI:10.26636/jtit.2007.1.742