Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs) have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL) measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWH...

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Veröffentlicht in:AIP advances 2013-07, Vol.3 (7), p.072111-072111
Hauptverfasser: Wang, Qi, Jia, Zhigang, Ren, Xiaomin, Yan, Yingce, Bian, Zhiqiang, Zhang, Xia, Cai, Shiwei, Huang, Yongqing
Format: Artikel
Sprache:eng
Schlagworte:
Boron
Compressive properties
Gallium arsenide
Gallium arsenides
Indium
Photoluminescence
Quantum wells
Wavelengths
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Zusammenfassung:In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs) have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL) measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWHM) of only 29.5 meV. In addition, a slight blue-shift (∼18 meV) of PL peak energy of InxGa1-xAs/GaAs MQWs was observed after boron incorporation. It has been found boron incorporation ( 40%), the positive effect of boron incorporation prevailed, i.e., boron incorporation completely suppressed the thickness undulation and lead to the improvement of PL properties.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4815971