Effect of copper surface pre-treatment on the properties of CVD grown graphene
Here, we report the synthesis of high quality monolayer graphene on the pre-treated copper (Cu) foil by chemical vapor deposition method. The pre-treatment process, which consists of pre-annealing in a hydrogen ambient, followed by diluted nitric acid etching of Cu foil, helps in removing impurities...
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Veröffentlicht in: | AIP advances 2014-12, Vol.4 (12), p.127107-127107-8 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Here, we report the synthesis of high quality monolayer graphene on the pre-treated copper (Cu) foil by chemical vapor deposition method. The pre-treatment process, which consists of pre-annealing in a hydrogen ambient, followed by diluted nitric acid etching of Cu foil, helps in removing impurities. These impurities include native copper oxide and rolling lines that act as a nucleation center for multilayer graphene. Raman mapping of our graphene grown on pre-treated Cu foil primarily consisted of ∼98% a monolayer graphene with as compared to 75 % for the graphene grown on untreated Cu foil. A high hydrogen flow rate during the pre-annealing process resulted in an increased I2D/IG ratio of graphene up to 3.55. Uniform monolayer graphene was obtained with a I2D/IG ratio and sheet resistance varying from 1.84 – 3.39 and 1110 – 1290 Ω/□, respectively. |
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ISSN: | 2158-3226 2158-3226 |
DOI: | 10.1063/1.4903369 |