A possible explanation of meta-magnetic transition in CeRu2Si2 and magnetic behavior in Gd-poor (Ce-Gd)Ru2Si2

Aiming at getting any clue to the mechanism of characteristic behavior of meta-magnetic transition in CeRu2Si2 and the Ce 4f electronic states in Gd-poor contents, the (Ce-Gd)Ru2Si2 crystal mixed system was studied through magnetic measurements. A characteristic behavior of meta-magnetic transition...

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Veröffentlicht in:AIP advances 2018-10, Vol.8 (10), p.101317-101317-6
Hauptverfasser: Yano, K., Amakai, Y., Hara, Y., Sato, K., Kita, E., Takano, H., Ohta, T., Murayama, S.
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Sprache:eng
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Zusammenfassung:Aiming at getting any clue to the mechanism of characteristic behavior of meta-magnetic transition in CeRu2Si2 and the Ce 4f electronic states in Gd-poor contents, the (Ce-Gd)Ru2Si2 crystal mixed system was studied through magnetic measurements. A characteristic behavior of meta-magnetic transition observed in CeRu2Si2 was found to be reproduced in GdRu2Si2 in the temperature range between 30 K and 40 K. The meta-magnetic transition field was increased to higher field by the substitution of small amount of Gd contents of 0.01 and 0.02 at%. Furthermore, the reciprocal susceptibility in CeRu2Si2 (Gd=0) in temperature range between 15 K and 300 K revealed that the electronic state of Ce 4f was dominantly Ce3+, which was in accordance with a previous work, and the electronic states of Ce 4f in CeRu2Si2 could be described by the Van Vleck paramagnetic picture.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5042853