Infrared detection through CMOS detector enabled by reversible luminescence quenching of quantum dots

The detection of infrared radiation through a CMOS detector has recently intrigued the scientists and engineers all over the world. This could lower the cost, simplify the operation, and improve the pixel of the conventional infrared detection technology. To achieve this objective, the infrared ligh...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:AIP advances 2023-02, Vol.13 (2), p.025139-025139-7
Hauptverfasser: Wang, Jeffrey Gan, Ma, Ruihua, Wu, Xing, Leng, Kangmin, Wang, Qisheng
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The detection of infrared radiation through a CMOS detector has recently intrigued the scientists and engineers all over the world. This could lower the cost, simplify the operation, and improve the pixel of the conventional infrared detection technology. To achieve this objective, the infrared light is converted into visible light via up-conversion nanoparticles or LED, which, however, suffers from complicated device fabrication. Herein, we report a type of simple infrared detection via a CMOS detector based on quantum dots (QDs). Inspired by the temperature effect of luminescence QDs, we design a setup that modulates the luminescence intensity of QDs via infrared radiation, which can be read out through a CMOS camera. Furthermore, the underlying mechanism of thermal quenching behavior is investigated through measurements of transient photoluminescence. Compared with traditional IR detectors, our infrared detection system possesses the advantages of facile fabrication and scalability, showing great potential for infrared detection.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0137649