Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS 2 field-effect transistors on paper fabricated with a “channel array” approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing. The first allows the pre-deposition of a pattern of MoS 2 ; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average I ON /I OFF of 8 × 10 3 (up to 5 × 10 4 ) and mobility of 5.5 cm 2 V −1 s −1 (up to 26 cm 2 V −1 s −1 ) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper. Paper is a promising substrate for flexible and environmentally sustainable electronic devices. Here, the authors combine chemical vapor deposition of MoS 2 with inkjet printing of a hexagonal boron nitride (hBN) dielectric and silver electrodes, to fabricate flexible MoS 2 field-effect transistors on paper, and then combine the latter with printed graphene resistors and silver interconnects to create inverters, logic gates and current mirrors.