On-wafer wideband characterization: a powerful tool for improving the IC technologies

On-wafer wideband characterization: a powerful tool for improving the IC technologies

In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic threshold (DT) voltage – SOI MOSFETs, 50 nm FinFET...

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Veröffentlicht in:Journal of Telecommunications and Information Technology 2023-06 (2), p.69-77
Hauptverfasser: Lederer, Dimitri, Raskin, Jean-Pierre
Format: Artikel
Sprache:eng
Schlagworte:
extraction techniques
microwave frequency
MOSFET
silicon-on-insulator
smallsignal equivalent circuit
wideband characterization
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Zusammenfassung:In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic threshold (DT) voltage – SOI MOSFETs, 50 nm FinFETs as well as long-channel planar double gate (DG) MOSFETs.
ISSN:1509-4553
1899-8852
DOI:10.26636/jtit.2007.2.811