Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination

Using scanning electron microscopy (SEM) and high-resolution x-ray photoelectron spectroscopy with the synchrotron radiation we investigated Si-based micro-clusters embedded in TaSiN thin films having oxygen contamination. TaSiN thin films were deposited by co-sputtering on fixed or rotated substrat...

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Veröffentlicht in:AIP advances 2015-08, Vol.5 (8), p.087131-087131-6
Hauptverfasser: Lee, Young Mi, Jung, Min-Sang, Choi, Duck-Kyun, Jung, Min-Cherl
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Sprache:eng
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Zusammenfassung:Using scanning electron microscopy (SEM) and high-resolution x-ray photoelectron spectroscopy with the synchrotron radiation we investigated Si-based micro-clusters embedded in TaSiN thin films having oxygen contamination. TaSiN thin films were deposited by co-sputtering on fixed or rotated substrates and with various power conditions of TaN and Si targets. Three types of embedded micro-clusters with the chemical states of pure Si, SiOx-capped Si, and SiO2-capped Si were observed and analyzed using SEM and Si 2p and Ta 4f core-level spectra were derived. Their different resistivities are presumably due to the different chemical states and densities of Si-based micro-clusters.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4928576