Design and fabrication of a semi-transparent solar cell considering the effect of the layer thickness of MoO3/Ag/MoO3 transparent top contact on optical and electrical properties
We conducted the present study to design and manufacture a semi-transparent organic solar cell (ST-OSC). First, we formed a transparent top contact as MoO 3 /Ag/MoO 3 in a dielectric/metal/dielectric (DMD) structure. We performed the production of an FTO/ZnO/P3HT:PCBM/MoO 3 /Ag/MoO 3 ST-OSC by integ...
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Veröffentlicht in: | Scientific reports 2021-06, Vol.11 (1), p.13079-13079, Article 13079 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We conducted the present study to design and manufacture a semi-transparent organic solar cell (ST-OSC). First, we formed a transparent top contact as MoO
3
/Ag/MoO
3
in a dielectric/metal/dielectric (DMD) structure. We performed the production of an FTO/ZnO/P3HT:PCBM/MoO
3
/Ag/MoO
3
ST-OSC by integrating MoO
3
/Ag/MoO
3
(10/
d
m
/
d
od
nm) instead of an Ag electrode in an opaque FTO/ZnO/P3HT:PCBM/MoO
3
/Ag (–/40/130/10/100 nm) OSC, after theoretically achieving optimal values of optical and electrical parameters depending on Ag layer thickness. The transparency decreased with the increase of
d
m
values for current DMD. Meanwhile, maximum transmittance and average visible transmittance (AVT) indicated the maximum values of over 92% for
d
m
= 4 and 8 nm, respectively. For ST-OSCs, the absorption and reflectance increased in the visible region by a wavelength of longer than 560 nm and in the whole near-infrared region by increasing
d
m
up to 16 nm. Moreover, in the CIE chromaticity diagram, we reported a shift towards the D65 Planckian locus for colour coordinates of current ST-OSCs. Electrical analysis indicated the photogenerated current density and AVT values for
d
m
=
6
nm as 63.30 mA/cm
2
and 38.52%, respectively. Thus, the theoretical and experimental comparison of optical and electrical characteristics confirmed that the manufactured structure is potentially conducive for a high-performance ST-OSC. |
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ISSN: | 2045-2322 2045-2322 |
DOI: | 10.1038/s41598-021-92539-8 |