Mesitylated trityl radicals, a platform for doublet emission: symmetry breaking, charge-transfer states and conjugated polymers
Neutral π-radicals have potential for use as light emitters in optoelectronic devices due to the absence of energetically low-lying non-emissive states. Here, we report a defect-free synthetic methodology via mesityl substitution at the para -positions of tris(2,4,6-trichlorophenyl)methyl radical. T...
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Veröffentlicht in: | Nature communications 2023-07, Vol.14 (1), p.4147-4147, Article 4147 |
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Sprache: | eng |
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Zusammenfassung: | Neutral π-radicals have potential for use as light emitters in optoelectronic devices due to the absence of energetically low-lying non-emissive states. Here, we report a defect-free synthetic methodology via mesityl substitution at the
para
-positions of tris(2,4,6-trichlorophenyl)methyl radical. These materials reveal a number of novel optoelectronic properties. Firstly, mesityl substituted radicals show strongly enhanced photoluminescence arising from symmetry breaking in the excited state. Secondly, photoexcitation of thin films of 8 wt% radical in 4,4’-bis(carbazol-9-yl)-1,1’-biphenyl host matrix produces long lived (in the order of microseconds) intermolecular charge transfer states, following hole transfer to the host, that can show unexpectedly efficient red-shifted emission. Thirdly, covalent attachment of carbazole into the mesitylated radical gives very high photoluminescence yield of 93% in 4,4’-bis(carbazol-9-yl)-1,1’-biphenyl films and light-emitting diodes with maximum external quantum efficiency of 28% at a wavelength of 689 nm. Fourthly, a main-chain copolymer of the mesitylated radical and 9,9-dioctyl-9
H
-fluorene shows red-shifted emission beyond 800 nm.
Neutral π-radicals are potential emitters for optoelectronic devices due to the absence of energetically low-lying non-emissive states. Here, the authors report mesityl-substituted tris(2,4,6-trichlorophenyl)methyl radicals and achieve maximum device efficiency of 28% at a wavelength of 689 nm. |
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ISSN: | 2041-1723 2041-1723 |
DOI: | 10.1038/s41467-023-39834-2 |